Plasma CVD equipment for thick film formation of SiO2
Plasma CVD device for thick film formation. High speed and low stress (patent pending).
● The adoption of a unique self-bias method enables high-speed (3000-5000 Å/min) and low-stress film deposition. (Patent pending) ● Low-temperature film deposition is possible at room temperature to about 350°C. Additionally, film deposition on plastics is feasible. ● Unique modifications in the reaction chamber help suppress particle generation. ● The LS-CVD method using liquid source TEOS allows for excellent step coverage and filling effects in film deposition. ● Arbitrary control of the refractive index is possible using liquid sources of Ge, P, and B. In addition to the standard one series, it is possible to add two more series of dopant introduction systems as options.
- Company：サムコ
- Price：Other
